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TP5012KTS1

TP5012KTS1 is a 50A, 1200V High reliability IGBT Module, with fast Trench/Fieldstop IGBT and Emitter Control diode.

TP5012KTS1

TP5012KTS1 is a 50A, 1200V High reliability IGBT Module, with fast Trench/Fieldstop IGBT and Emitter Control diode.

Main Features

  • Low VCE(sat)
  • Low Switching losses
  • Built in fast recovery diode
  • Tvj op=150°C
  • VCE(sat) with positive Temperature Coefficient
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Absolute Maximum Ratings

Unless otherwise stated, TA = 25ºC 

 

IGBT Inverter

 

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current (TC=95℃ ),Tvj max=175°C

50

A

ICpulse

Pulsed Collector Current (tp=1ms)

100

A

Ptot

Power Dissipation (TC=25℃ ) ,Tvj max=175°C

280

W

 

FRD Inverter

 

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak Reverse voltage

1200

V

IF

Continuous DC forward current

50

A

IFRM

Repetitive peak Forward current tp=1ms

100

A

 

Diode Rectifier

 

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak Reverse voltage

1600

V

IRMSM

Maximum RMS forward current (per chip) Tc=80°C

70

A

IRMSM

Maximum RMS current at rectifier output Tc=80°C

80

A

 

Parameter

VCE

VCE(sat)

VF

Tj,Max

Eon

Eoff

Value

1200V

1.9V

1.7V

175°C

3.5mJ

2.8mJ

 

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典型应用

Inverters
Motor Drives
Servo Drives
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Package

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Download

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TP5012KTS1 EN pdf 134.4KB