Product Center

Product Center

TRW5065SL1

TRW5065SL1 is a IGBT which with 50A, 650V High reliability and High-speed Switching Characteristics. Also with Low VCE(sat) and Low Switching losses.

TRW5065SL1

TRW5065SL1 is a IGBT which with 50A, 650V High reliability and High-speed Switching Characteristics. Also with Low VCE(sat) and Low Switching losses.

Main features

  • 50A ,650V,VCE(sat)=1.5V @IC=50A
  • VCE(sat) with positive temperature coefficient,Favorable parallel operation
  • Low VCE(sat)
  • Built in fast recovery diode
  • High speed switching characteristics
  • High reliability, thermal stability, and good parameter consistency
  • Minimum short circuit time 5 µ s
图片名称

Maximum Ratings

 Unless otherwise stated, TA = 25ºC 

 

Symbol

Parameter

Value

Unit

VCE

Collector-Emitter Voltage

650

V

Gate-Emitter Voltage

±20

IC

Collector Current (TC=25℃ )

80

A

Collector Current (TC=100℃ )

50

ICpulse

Pulsed Collector Current

200

IF

Diode forward current(TC=25℃ )

60

Diode forward current(TC=100℃ )

30

IFpulse

Diode Pulse current

90

Ptot

Power Dissipation (TC=25℃ )

227

W

Power Dissipation (TC=100℃ )

91

 

 

Parameter

VCE

VCE(sat)

VF

Tj,Max

Eon

Eoff

Value

650V

1.5V

1.4V

150°C

3.1mJ

1.95mJ

 

图片名称

Applications

Inverter
UPS power supply and other fields
图片名称

Package

undefined
undefined
TO-247
图片名称

Product documentation download

Product name type size(KB) Download the latest English version
TRW5065SL1EN pdf 513.6KB