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TRW5065CH1

TRW5065CH1 is a IGBT which with 50A, 650V High reliability and High-speed Switching Characteristics, Built in SiC diode. Also with Low VCE(sat) and Low Switching losses.

TRW5065CH1

TRW5065CH1 is a IGBT which with 50A, 650V High reliability and High-speed Switching Characteristics, Built in SiC diode. Also with Low VCE(sat) and Low Switching losses.

Main Features

  • 50A ,650V,VCE(sat)=1.5V @IC=50A
  • VCE(sat) with positive temperature coefficient,Favorable parallel operation
  • Low switching losses
  • Built in SiC diode
  • High speed switching characteristics
  • High reliability, thermal stability, and good parameter consistency
  • Minimum short circuit time 5 µ s
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Maximum Ratings

Unless otherwise stated, TA = 25ºC 

 

Symbol

Parameter

Value

Unit

VCE

Collector-Emitter Voltage

650

V

Gate-Emitter Voltage

±20

IC

Collector Current (TC=25℃)

80

A

Collector Current (TC=100℃)

50

ICpulse

Pulsed Collector Current

150

IF

Diode forward current(Tj=150℃)

20

Ptot

Power Dissipation (TC=25℃)

259

W

Power Dissipation (TC=100℃)

129

 

Parameter

VCE

VCE(sat)

VF

Tj,Max

Eon

Eoff

Value

650V

1.8V

1.5V

175°C

1.6mJ

1.2mJ

 

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Applications

UPS power supply
PFC power supply
High power supply and other fields
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Package

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TO-247
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Download Product Documentation

Product name type size(KB) Download the latest English version
TRW5065CH1中文 pdf 1.4MB