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TRW3065NH1

TRW3065NH1 is a IGBT which with 30A, 650V High reliability and High-speed Switching Characteristics, also with Low VCE(sat) and Low Switching losses.

TRW3065NH1

TRW3065NH1 is a IGBT which with 30A, 650V High reliability and High-speed Switching Characteristics, also with Low VCE(sat) and Low Switching losses.

Main Features

  • 30A,650V, VCE(sat)=1.9V @IC=30A
  • VCE(sat) with positive temperature coefficient,Favorable parallel operation
  • Low Switching losses
  • Built in fast recovery diode
  • High speed switching characteristics
  • High reliability, thermal stability, and good parameter consistency
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Absolute Maximum Ratings

 (Unless otherwise stated, TA = 25ºC )

 

Symbol

Parameter

Value

Unit

VCE

Collector-Emitter Voltage

650

V

Gate-Emitter Voltage

±20

IC

Collector Current (TC=25℃)

60

A

Collector Current (TC=100℃)

30

ICpulse

Pulsed Collector Current

120

IF

Diode Forward Current (TC=25℃)

10

Diode Forward Current (TC=100℃)

5

IFpulse

Diode Pulse current

15

Ptot

Power Dissipation (TC=25℃)

205

W

Power Dissipation (TC=100℃)

82

 

Parameter

VCE

VCE(sat)

VF

Tj,Max

Eon

Eoff

Value

650V

1.9V

1.5V

150°C

0.66mJ

0.60mJ

 

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Applications

UPS power supply
PFC power supply
High power supply and other fields
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Package

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TO-247
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Download Product Documentation

Product name type size(KB) Download the latest English version
TRW3065NH1 EN pdf 551.1KB