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TRW(E/G)5065NH1

TRW(E/G)5065NH1 is a IGBT Which with 50A, 650V High reliability and High-speed Switching Characteristics. Also with Low VCE(sat) and Low Switching losses.

TRW(E/G)5065NH1

TRW(E/G)5065NH1 is a IGBT Which with 50A, 650V High reliability and High-speed Switching Characteristics. Also with Low VCE(sat) and Low Switching losses.

Main Features

  • 50A ,650V ,VCE(sat)=1.8V @IC=50A
  • VCE(sat) with positive temperature coefficient,Favorable parallel operation
  • Low Switching losses
  • Built in fast recovery diode
  • High reliability, thermal stability, and good parameter consistency
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Maximum Ratings

Unless otherwise stated, TA = 25ºC 

 

Symbol

Parameter

Value

Unit

VCE

Collector-Emitter Voltage

650

V

Gate-Emitter Voltage

±20

IC

Collector Current (TC=25℃)

80

A

Collector Current (TC=100℃)

50

ICpulse

Pulsed Collector Current

150

IF

Diode forward current (TC=25℃)

10

Diode forward current (TC=100℃)

5

IFpulse

Diode Pulse current

15

A

Ptot

Power Dissipation (TC=25℃) (TO-247)

216

W

Power Dissipation (TC=100℃) (TO-247)

86

Power Dissipation (TC=25℃) (TO-3PF)

68

Power Dissipation (TC=100℃) (TO-3PF)

27

 

Parameter

VCE

VCE(sat)

VF

Tj,Max

Eon

Eoff

Value

650V

1.8V

1.5V

150°C

1.2mJ

1.4mJ

 

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Applications

Inverter
UPS power supply and other fields
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Package

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TO-3PF
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TO-247
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TO-3P
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Download Product Documentation

Product name type size(KB) Download the latest English version
TRW5065NH1EN pdf 552.8KB